ds30761 rev. 4 - 2 1 of 7 dcx100ns www.diodes.co m ? diodes incorporated characteristic symbol value unit power dissipation (note 3) pd 150 mw thermal resistance, j unction to ambient air (note 3) r q ja 833 c/w operating and storage junc tion temperature range t j , t stg -55 to +150 c collector current (us ing pnp as pass trans istor) i c(max) 100 ma features @ t a = 25 c unless otherwise s pecified e q 2 r 1 1 k b q 2 c q 1 1 q 1 d d t a 1 1 3 z e _ d i e 2 r 3 1 0 k 3 4 r 2 1 0 k 5 6 e q 1 r 4 1 0 k q 2 d d t c 1 1 4 e e _ d i e s o t 5 6 3 b q 1 c q 2 dcx100 ns 100ma dual co mplem entary pre-bi ased transisto rs mechanical data built in b iasing resistors epitaxial planar die construction lead free by design/r ohs complian t (note 1) "green" device (no te 2) ideally suited fo r automated assembly processes notes: 1. no purposefully added lead. 2 . diodes inc.'s "green" policy can be found on our website at http: /www.diodes.com/products/lead_free/index.php. 3. device mounted on fr-4 pc b, 1 inch x 0.85 inch x 0.062 inch; please see page 6 or as per diodes inc. suggested pad layout document ap02001 on our website at http: //www.diodes.com/datasheets/ap02001.pdf . fig. 2: schematic and pin configuration maximum ratings: tot al device case: sot-563 case material: molded plastic. "green molding" compound. ul flammability classification rating 94v-0 moisture sensitivity: level 1 per j-std-020c terminal connections: see fig. 2 terminals: finish - matte tin annealed over alloy 42 leadframe. solderable per mil-std-202, method 208 marking & type code information: see page 5 ordering information: see page 5 and 6 weight: 0.005 grams (approximate) dcx100ns is best suited for applications where the load needs to be turned on and off using control circ uits like micro-controllers, c omparators etc . particularly at a point of load. it features a discr ete pnp pass trans istor which can support continuous max imum current up to 100 ma. it also contains an npn transis tor which can be us ed as a control switch and also it can be biased us ing higher supply. the component devices can be used as part of a c ircuit or as stand alone discrete dev ices. sub-component device - pre-biased pnp transist or characteristic symbol value unit supply voltage v cc -50 v input voltage v in +5 to -10 v output current i c -100 ma 1 2 3 4 5 6 general descr ipti on fig. 1: sot-563 @ t a = 25 c unless otherwise s pecified sub-component p /n reference device type r1 (nom) r2 (nom) r3, r4 (nom) figure ddta113ze_die q1 pnp 1k w 10k w ? 2 ddtc114ee_die q2 npn ? ? 10k w 2 l e a d - f r e e g r e e n t c u d o r p w e n
ds30761 rev. 4 - 2 2 of 7 dcx100ns www.diodes.co m sub-component device - pre-biased npn transist or @ t a = 25 c unless otherwise s pecified characteristic symbol value unit supply voltage v cc 50 v input voltage v in -10 to +40 v output current i c 50 ma electri cal character isti cs: pre-bi ased pnp transistor @ t a = 25 c unless otherwise s pecified characteristic symbol min typ max unit test condition input voltage v i(off) -0.3 ? ? v v cc = -5v, i o = -100ua v i(on) ? ? -3.0 v v o = -0.3v, i o = -20ma output voltage v o(on) ? -0.1 -0.3 v i o /i i = -10ma / -0.5ma input current i i ? ? -7.2 ma v i = -5v output current i o(off) ? ? -0.5 ua v cc = -50v, v i = 0v dc current gain g i 33 ? ? ? v o = -5v, i o = -5ma input resistor toleranc e d r1 -30 ? +30 % ? resistor ratio tolerance r2/r1 0.8 1 1.2 % ? gain-bandwidth product f t ? 250 ? mhz v ce = -10v, i e = -5ma, f = 100 mhz electri cal character isti cs: pre-bi ased npn transistor @ t a = 25 c unless otherwise s pecified characteristic symbol min typ max unit test condition input voltage v i(off) 0.5 1.18 ? v v cc = 5v, i o = 100ua v i(on) ? 1.85 3 v v o = 0.3v, i o = 10ma output voltage v o(on) ? 0.1 0.3 v i o /i i = 10ma / 0.5ma input current i i ? ? 0.88 ma v i = 5v output current i o(off) ? ? 0.5 ua v cc = 50v, v i = 0v dc current gain g i 30 ? ? ? v o = 5v, i o = 5ma input resistor toleranc e d r1 -30 ? +30 % ? resistor ratio tolerance r2/r1 0.8 1 1.2 ? ? gain-bandwidth product f t ? 250 ? mhz v ce = 10v, i e = 5ma, f = 100 mhz typical charact eristi cs @ t amb = 25 c unless otherwise s pecified - 5 0 0 5 0 1 0 0 1 5 0 2 5 0 2 0 0 1 5 0 5 0 1 0 0 0 t , a m b i e n t t e m p e r at u r e ( c ) a f i g . 3 p o w e r d e r a t i n g c u r v e ( t o t a l d e v i c e ) p , p o w e r d i s s i p a t i o n ( m w ) d t c u d o r p w e n
ds30761 rev. 4 - 2 3 of 6 dcx100ns www.diodes.co m 0 0.1 10 1 10 0 i , c ol le ct or c ur re nt (m a) c fi g. 8 i np ut v olt ag e vs . o ut pu t c ur re nt i n p u t v o l t a g e ( v ) 3 6 9 12 15 v = 0.3 v ce t =1 50 c a t =1 25 c a t = 85 c a t = 25 c a t = -55 c a 0 .0 2 0 .0 4 0 .0 6 0 .0 8 0 .1 2 0 .1 4 0 .1 6 0 .1 8 0 .1 0 .2 0 0 i , c o l l e c t o r c u r r e n t ( m a ) c v , c o l l e c t o r e m it t e r v o l t a g e ( v ) c e f ig . 4 v v s . i c e (s a t ) c 0 .2 0 .4 0 .6 0 .8 1 1 .2 1 .4 1 .6 1 .8 2 i = 2 0m a b i = 1 8m a b i = 1 6m a b i = 1 4m a b i = 1 2m a b i = 1 0m a b i = 8 m a b i = 6 m a b i = 4 m a b i = 2 m a b characteri stics curves of pnp transistor ( q1) @ t amb = 25 c unless otherwise s pecified v , c o l l e c t o r e m i t t e r c e ( s a t ) v o l t a g e ( v ) i , c o l l e c t o r c u r r e n t ( m a ) c f i g . 6 v v s i c e ( s a t ) c 0 . 0 1 0 . 1 1 1 0 1 0 0 0 . 1 1 1 0 1 0 0 1 0 0 0 i c / i b = 1 0 t = 2 5 c a t = - 5 5 c a t = 8 5 c a t = 1 2 5 c a t = 1 5 0 c a 10 0 1 0.1 10 10 0 10 00 h , d c c u r r e n t g a i n f e i , c ol le ct or c ur re nt (m a) c fig . 5 d c cu rre nt ga in 0 50 15 0 20 0 25 0 30 0 v = 5 v ce t = 8 5 c a t = 1 25 c a t = 1 50 c a t = 2 5 c a t = - 55 c a 0 .0 1 0 .1 0 .1 1 0 1 0 0 1 1 0 1 0 0 1 0 0 0 v , c o l l e c t o r e m i t t e r v o l t a g e ( v ) c e ( s a t ) i , c o l l e c to r c u r r e n t ( m a ) c f ig . 7 v v s i c e (s a t ) c 1 ic /i b = 2 0 t = 1 5 0 c a t = 1 2 5 c a t = 8 5 c a t = 2 5 c a t = -5 5 c a t c u d o r p w e n 1 0 i , c o l l e c t o r c u r r e n t ( m a ) c f ig . 9 v v s i b e (o n ) c 1 1 0 0 v , b a s e e m i t t e r v o l t a g e ( v ) b e ( 0 n ) 0 0 .2 0 .4 0 .6 0 .8 1 1 .2 1 .4 1 .6 1 .8 2 0 .1 v = 5 v c e t = -5 5 c a t = 2 5 c a t = 85 c a t = 1 25 c a t = 1 50 c a
ds30761 rev. 4 - 2 4 of 7 dcx100ns www.diodes.co m 10 i , c ol le ct or c ur re nt (m a) c fig . 1 3 dc c urr en t g ain 1 10 0 h , d c c u r r e n t g a i n f e 0 0.1 50 10 0 15 0 20 0 25 0 30 0 10 00 v = 5 v ce t = -55 c a t = 25 c a t = 85 c a t = 1 25 c a t = 1 50 c a v , c o l l e c t o r e m i t t e r v o lta g e ( v ) c e f i g . 1 2 v v s i c e c i , c o l l e c t o r c u r r e n t ( m a ) c 0 0 . 0 1 0 . 0 2 0 . 0 3 0 . 0 4 0 . 0 5 0 . 0 6 0 . 0 7 0 . 0 8 0 . 0 9 0 . 1 0 0 . 4 0 . 8 1 . 2 1 . 6 2 i = 0 . 2 5 m a b i = 1 . 2 5 m a b i = 0 . 5 m a b i = 0 . 7 5 m a b i = 1 . 5 m a b i = 1 . 7 5 m a b i = 2 m a b i = 1 m a b v , c o l l e c t o r e m i t t e r c e ( s a t ) v o l t a g e ( v ) i , c o l l e c t o r c u r r e n t ( m a ) c f i g . 1 4 v v s i c e ( s at ) c 0 . 0 1 0 . 1 1 1 0 1 0 0 0 . 1 1 1 0 1 0 0 1 0 0 0 i c / i b = 2 0 t = 1 5 0 c a t = 1 2 5 c a t = 8 5 c a t = 2 5 c a t = - 5 5 c a characteri stics curves of npn transistor ( q2) @ t amb = 25 c unless otherwise s pecified t c u d o r p w e n 1 5 i , c o l l e c t o r c u r r e n t ( m a ) c f i g . 1 0 v v s i b e ( s at ) c v , b a s e e m i t t e r v o l t a g e ( v ) b e ( s a t ) 9 0 . 1 1 0 1 0 0 0 3 6 1 2 1 i / i = 1 0 c b t = 2 5 c a t = 1 5 0 c a t = 1 2 5 c a t = 8 5 c a t = - 5 5 c a 1 0 i , c o l l e c t o r c u r r e n t ( m a ) c f i g . 1 1 v v s i b e ( s at ) c v , b a s e e m i t t e r v o l t a g e ( v ) b e ( s a t ) 0 . 1 0 1 5 1 1 0 0 2 3 4 6 7 8 i c / i b = 2 0 t = 1 5 0 c a t = 1 2 5 c a t = 8 5 c a t = 2 5 c a t = - 5 5 c a v , c o l l e c t o r e m i t t e r c e ( s a t ) v o l t a g e ( v ) i , c o l l e c t o r c u r r e n t ( m a ) c f i g . 1 5 v v s i c e ( s a t ) c 0 . 0 1 0 . 1 1 1 0 1 0 0 0 . 1 1 1 0 1 0 0 1 0 0 0 i c / i b = 2 0 t = - 5 5 c a t = 2 5 c a t = 8 5 c a t = 1 2 5 c a t = 1 5 0 c a
ds30761 rev. 4 - 2 5 of 7 dcx100ns www.diodes.co m device marki ng code packaging shipping dcx100ns-7 c01 sot-563 3000/tape & reel notes: 4. for packaging details, please see page 6 or go to our website at http:/ /www.diodes.com/datasheets/ap02007.pdf. orderi ng inform ation (note 4) t c u d o r p w e n i n p u t v o l t a g e ( v ) i , c o l l e c t o r c u r r e n t ( m a ) c f i g . 1 6 i n p u t v o l t a g e v s o u t p u t c u r r e n t 0 0 . 1 1 1 0 1 0 0 5 1 0 1 5 2 0 2 5 v = 0 . 3 v c e t = 1 5 0 c a t = 1 2 5 c a t = 8 5 c a t = 2 5 c a t = - 5 5 c a v , b a s e e m i t t e r v o l t a g e ( v ) b e ( o n ) i , c o l l e c t o r c u r r e n t ( m a ) c f i g . 1 7 v v s i b e ( o n ) c 0 0 . 1 1 1 0 1 0 0 5 1 0 1 5 2 0 2 5 v = 5 v c e t = 1 5 0 c a t = 1 2 5 c a t = 8 5 c a t = 2 5 c a t = - 5 5 c a v , b a s e e m i t t e r v o l t a g e ( v ) b e ( s a t ) i , c o l l e c t o r c u r r e n t ( m a ) c f i g . 1 8 v v s i b e ( o n ) c 0 0 . 1 1 1 0 1 0 0 6 1 2 1 8 2 4 3 0 i c / i b = 1 0 t = 1 5 0 c a t = 1 2 5 c a t = 8 5 c a t = 2 5 c a t = - 5 5 c a v , b a s e e m i t t e r v o l t a g e ( v ) b e ( s a t ) i , c o l l e c t o r c u r r e n t ( m a ) c f i g . 1 9 v v s i b e ( s at ) c 0 0 . 1 1 1 0 1 0 0 6 1 2 1 8 2 4 3 0 i c / i b = 2 0 t = 1 5 0 c a t = 1 2 5 c a t = 8 5 c a t = 2 5 c a t = - 5 5 c a
ds30761 rev. 4 - 2 6 of 7 dcx100ns www.diodes.co m a m l b c h k g d c0 1y m fig. 21 mechanical details suggested pad layout: (based on ipc -sm-782) sot-563 dim min max typ a 0.15 0.3 0.25 b 1.1 1.25 1.2 c 1.55 1.7 1.6 d 0.5 g 0.90 1.1 1.00 h 1.5 1.7 1.6 k 0.56 0.6 0.6 l 0.15 0.25 0.2 m 0.1 0.18 0.11 all dimensions in m m t c u d o r p w e n month jan feb march apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d year 2005 2006 2007 2008 2009 2010 2011 2012 code s t u v w x y z date code key fig. 20 c 0 1 y m c01 = product type mark ing code ym = date code marking y = year e.g., t = 2006 m = month e.g., 9 = september marking i nformat ion figure 22 dimensions sot-563 z 2.2 g 1.2 x 0.375 y 0.5 c 1.7 e 0.5 x z y c e e g fig. 22
ds30761 rev. 4 - 2 7 of 7 dcx100ns www.diodes.co m t c u d o r p w e n i m p o r t a n t n o t i c e d i o d e s i n c o r p o r a t e d a n d i t s s u b s i d i a r i e s r e s e r v e t h e r i g h t t o m a k e m o d i f i c a t i o n s , e n h a n c e m e n t s , i m p r o v e m e n t s , c o r r e c t i o n s o r o t h e r c h a n g e s w i t h o u t f u r t h e r n o t i c e t o a n y p r o d u c t h e r e i n . d i o d e s i n c o r p o r a t e d d o e s n o t a s s u m e a n y l i a b i l i t y a r i s i n g o u t o f t h e a p p l i c a t i o n o r u s e o f a n y p r o d u c t d e s c r i b e d h e r e i n ; n e i t h e r d o e s i t c o n v e y a n y l i c e n s e u n d e r i t s p a t e n t r i g h t s , n o r t h e r i g h t s o f o t h e r s . t h e u s e r o f p r o d u c t s i n s u c h a p p l i c a t i o n s s h a l l a s s u m e a l l r i s k s o f s u c h u s e a n d w i l l a g r e e t o h o l d d i o d e s i n c o r p o r a t e d a n d a l l t h e c o m p a n i e s w h o s e p r o d u c t s a r e r e p r e s e n t e d o n o u r w e b s i t e , h a r m l e s s a g a i n s t a l l d a m a g e s . l i f e s u p p o r t d i o d e s i n c o r p o r a t e d p r o d u c t s a r e n o t a u t h o r i z e d f o r u s e a s c r i t i c a l c o m p o n e n t s i n l i f e s u p p o r t d e v i c e s o r s y s t e m s w i t h o u t t h e e x p r e s s e d w r i t t e n a p p r o v a l o f t h e p r e s i d e n t o f d i o d e s i n c o r p o r a t e d .
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